SI4155DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 30-V (D-S) MOSFET SO-8
$0.85
Available to order
Reference Price (USD)
1+
$0.85000
500+
$0.8415
1000+
$0.833
1500+
$0.8245
2000+
$0.816
2500+
$0.8075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI4155DY-T1-GE3 single MOSFET from Vishay Siliconix is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SI4155DY-T1-GE3 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Microchip Technology
APT53N60BC6
Diodes Incorporated
DMNH10H028SK3-13
Rohm Semiconductor
RSL020P03TR
Diodes Incorporated
BS107PSTZ
Alpha & Omega Semiconductor Inc.
AOTL66518
Infineon Technologies
IPI90R800C3XKSA1
Infineon Technologies
BSC070N10LS5ATMA1
IXYS
IXTP02N120P
onsemi
FDB035AN06A0
Taiwan Semiconductor Corporation