SI4590DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P CHAN 100V SO8 DUAL
$1.00
Available to order
Reference Price (USD)
2,500+
$0.41019
5,000+
$0.38357
12,500+
$0.37026
25,000+
$0.36300
Exquisite packaging
Discount
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Optimize your electronic projects with the SI4590DY-T1-GE3 from Vishay Siliconix, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the SI4590DY-T1-GE3 ensures top-notch performance. Vishay Siliconix's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
- Rds On (Max) @ Id, Vgs: 57mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
- Power - Max: 2.4W, 3.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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