SI4800BDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 6.5A 8SO
$0.96
Available to order
Reference Price (USD)
2,500+
$0.32578
5,000+
$0.30464
12,500+
$0.29407
25,000+
$0.28830
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SI4800BDY-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SI4800BDY-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Renesas Electronics America Inc
RJK0379DPA-00#J5A
Alpha & Omega Semiconductor Inc.
AOW29S50
onsemi
FDP26N40
Infineon Technologies
IPB049N08N5ATMA1
Vishay Siliconix
SI4850BDY-T1-GE3
IXYS
IXFH270N06T3
Infineon Technologies
SPD03N60C3ATMA1
STMicroelectronics
SCTH35N65G2V-7
STMicroelectronics
STFH24N60M2
Panjit International Inc.