SI4914DY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 5.5A 8-SOIC
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The SI4914DY-T1-E3 from Vishay Siliconix is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SI4914DY-T1-E3 provides reliable performance in demanding environments. Choose Vishay Siliconix for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W, 1.16W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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