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SI4936BDY-T1-E3

Vishay Siliconix
SI4936BDY-T1-E3 Preview
Vishay Siliconix
MOSFET 2N-CH 30V 6.9A 8-SOIC
$1.00
Available to order
Reference Price (USD)
2,500+
$0.36159
5,000+
$0.33665
12,500+
$0.32418
25,000+
$0.31738
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC

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