TSM680P06DPQ56 RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET 2 P-CH 60V 12A 8PDFN
$2.53
Available to order
Reference Price (USD)
2,500+
$0.28971
5,000+
$0.27972
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the TSM680P06DPQ56 RLG from Taiwan Semiconductor Corporation for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the TSM680P06DPQ56 RLG stands out for its reliability and efficiency. Taiwan Semiconductor Corporation's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
- Power - Max: 3.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
Related Products
Diodes Incorporated
DMN601VKQ-7
Microchip Technology
APTM20DUM04G
Vishay Siliconix
SI9926CDY-T1-GE3
onsemi
FDS3890
Advanced Linear Devices Inc.
ALD310700PCL
Fairchild Semiconductor
HUF75842S3
Diodes Incorporated
DMG6602SVT-7
Alpha & Omega Semiconductor Inc.
AOD609
Diodes Incorporated
ZXMC10A816N8TC
Infineon Technologies