SI5515CDC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 20V 4A 1206-8
$0.87
Available to order
Reference Price (USD)
3,000+
$0.35595
6,000+
$0.33285
15,000+
$0.32130
30,000+
$0.31500
Exquisite packaging
Discount
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Optimize your electronic projects with the SI5515CDC-T1-GE3 from Vishay Siliconix, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the SI5515CDC-T1-GE3 ensures top-notch performance. Vishay Siliconix's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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