SI5922DU-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2 N-CH 30V 6A POWERPAK
$0.19
Available to order
Reference Price (USD)
3,000+
$0.20034
6,000+
$0.18741
15,000+
$0.17449
30,000+
$0.16544
Exquisite packaging
Discount
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The SI5922DU-T1-GE3 from Vishay Siliconix is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SI5922DU-T1-GE3 provides reliable performance in demanding environments. Choose Vishay Siliconix for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 19.2mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 15V
- Power - Max: 10.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® ChipFET™ Dual
- Supplier Device Package: PowerPAK® ChipFet Dual
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