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SI6562CDQ-T1-BE3

Vishay Siliconix
SI6562CDQ-T1-BE3 Preview
Vishay Siliconix
N- AND P-CHANNEL 20-V (D-S) MOSF
$1.07
Available to order
Reference Price (USD)
1+
$1.07000
500+
$1.0593
1000+
$1.0486
1500+
$1.0379
2000+
$1.0272
2500+
$1.0165
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
  • Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP

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