SI6562CDQ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 20V 6.7A 8-TSSOP
$1.07
Available to order
Reference Price (USD)
3,000+
$0.48380
6,000+
$0.46109
15,000+
$0.44486
Exquisite packaging
Discount
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Optimize your electronic projects with the SI6562CDQ-T1-GE3 from Vishay Siliconix, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the SI6562CDQ-T1-GE3 ensures top-notch performance. Vishay Siliconix's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
- Power - Max: 1.6W, 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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