SI7101DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 35A PPAK 1212-8
$1.31
Available to order
Reference Price (USD)
3,000+
$0.59040
6,000+
$0.56268
15,000+
$0.54288
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI7101DN-T1-GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI7101DN-T1-GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Vishay Siliconix
SI7336ADP-T1-E3
Texas Instruments
CSD25480F3T
onsemi
NTMFS5C442NT3G
Panjit International Inc.
PJA7002H_R1_00001
onsemi
FCP165N60E
STMicroelectronics
STW22N95K5
SemiQ
GP2T080A120U
Vishay Siliconix
SQD50034EL_GE3
STMicroelectronics
STD3LN80K5
Renesas Electronics America Inc