SI7114DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 11.7A PPAK1212-8
$0.93
Available to order
Reference Price (USD)
3,000+
$0.76358
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI7114DN-T1-GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI7114DN-T1-GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Toshiba Semiconductor and Storage
SSM5H16TU,LF
Infineon Technologies
AUIRFSA8409-7TRL
Diodes Incorporated
DMN3110S-7
Vishay Siliconix
SI2323DS-T1-BE3
Rohm Semiconductor
R6030ENXC7G
Diodes Incorporated
DMN65D8LW-7
Rectron USA
RM5N800LD
Rohm Semiconductor
R6015ENX
STMicroelectronics
STB13N80K5
Vishay Siliconix