SI7655ADN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 40A PPAK1212-8S
$0.97
Available to order
Reference Price (USD)
3,000+
$0.43624
6,000+
$0.41576
15,000+
$0.40113
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SI7655ADN-T1-GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SI7655ADN-T1-GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
Related Products
Nexperia USA Inc.
PSMN013-100YSEX
Toshiba Semiconductor and Storage
TPN3300ANH,LQ
Toshiba Semiconductor and Storage
SSM6J511NU,LF
Fairchild Semiconductor
FDU6696
IXYS
IXFX66N85X
Vishay Siliconix
IRFZ44SPBF
Rohm Semiconductor
SCT3080ARC14
Vishay Siliconix
IRF614STRRPBF
onsemi
SCH1330-TL-W
Infineon Technologies