Shopping cart

Subtotal: $0.00

SI7788DP-T1-GE3

Vishay Siliconix
SI7788DP-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 30V 50A PPAK SO-8
$1.53
Available to order
Reference Price (USD)
3,000+
$1.47405
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5370 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

Related Products

Rohm Semiconductor

RCX300N20

Rohm Semiconductor

RV3CA01ZPT2CL

Infineon Technologies

IRL530NSTRRPBF

STMicroelectronics

STD25NF20

Vishay Siliconix

IRFD024PBF

Panjit International Inc.

PJW8N03_R2_00001

Vishay Siliconix

SI7153DN-T1-GE3

Fairchild Semiconductor

FDS6162N3

Top