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SI8424CDB-T1-E1

Vishay Siliconix
SI8424CDB-T1-E1 Preview
Vishay Siliconix
MOSFET N-CH 8V 4MICROFOOT
$0.65
Available to order
Reference Price (USD)
3,000+
$0.24368
6,000+
$0.22883
15,000+
$0.21398
30,000+
$0.20358
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8 V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
  • Vgs (Max): ±5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-UFBGA, WLCSP

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