SIA413DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 12A PPAK SC70-6
$0.98
Available to order
Reference Price (USD)
3,000+
$0.44280
6,000+
$0.42201
15,000+
$0.40716
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SIA413DJ-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SIA413DJ-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
onsemi
HUF75639S3ST
Fairchild Semiconductor
FDB2670
onsemi
FQPF2N60C
Infineon Technologies
IPP60R280P7XKSA1
Vishay Siliconix
SI4442DY-T1-E3
Texas Instruments
CSD18511KTTT
Vishay Siliconix
SIS402DN-T1-GE3
Vishay Siliconix
IRF9620STRLPBF
Alpha & Omega Semiconductor Inc.
AOB600A70FL
IXYS