SIA537EDJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 12V/20V SC-70-6L
$0.70
Available to order
Reference Price (USD)
3,000+
$0.26082
6,000+
$0.24493
15,000+
$0.22903
30,000+
$0.21791
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIA537EDJ-T1-GE3 by Vishay Siliconix is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SIA537EDJ-T1-GE3 provides reliable operation under stringent conditions. Vishay Siliconix's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V, 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
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