SIA950DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 190V 0.95A SC-70-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the SIA950DJ-T1-GE3 from Vishay Siliconix for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SIA950DJ-T1-GE3 stands out for its reliability and efficiency. Vishay Siliconix's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 190V
- Current - Continuous Drain (Id) @ 25°C: 950mA
- Rds On (Max) @ Id, Vgs: 3.8Ohm @ 360mA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
- Power - Max: 7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
Related Products
Diodes Incorporated
ZXMC4A16DN8TA
onsemi
NTJD4001NT1
Vishay Siliconix
SI6969DQ-T1-GE3
Alpha & Omega Semiconductor Inc.
AO4616L_103
Toshiba Semiconductor and Storage
TPC8213-H(TE12LQ,M
onsemi
NTJD4401NT4
onsemi
SI4542DY
onsemi
FDMS3620S
onsemi
FDMS3668S
Diodes Incorporated