ZXMN3A06N8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 8SOIC
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Choose the ZXMN3A06N8TA from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the ZXMN3A06N8TA stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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