SIDR220EP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 25 V (D-S) 175C MOSFET
$3.52
Available to order
Reference Price (USD)
1+
$3.52000
500+
$3.4848
1000+
$3.4496
1500+
$3.4144
2000+
$3.3792
2500+
$3.344
Exquisite packaging
Discount
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The SIDR220EP-T1-RE3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SIDR220EP-T1-RE3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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