SIHD2N80E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 2.8A DPAK
$1.49
Available to order
Reference Price (USD)
1+
$1.49000
500+
$1.4751
1000+
$1.4602
1500+
$1.4453
2000+
$1.4304
2500+
$1.4155
Exquisite packaging
Discount
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The SIHD2N80E-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SIHD2N80E-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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