SIHFL210TR-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CHANNEL 200V
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SIHFL210TR-GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SIHFL210TR-GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
Related Products
Renesas Electronics America Inc
RJK0349DSP-01#J0
Infineon Technologies
BSC014N04LSATMA1
Renesas Electronics America Inc
RJK0330DPB-01#J0
Vishay Siliconix
SIR880BDP-T1-RE3
Microchip Technology
APT58M50JU2
onsemi
5HP01M-TL-E
STMicroelectronics
STD9N65M2
STMicroelectronics
STI6N90K5
Vishay Siliconix
SI7818DN-T1-GE3
Diodes Incorporated