SIHG120N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 25A TO247AC
$3.57
Available to order
Reference Price (USD)
1+
$6.22000
10+
$5.57500
100+
$4.60640
500+
$3.76726
1,000+
$3.20784
2,500+
$3.05723
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHG120N60E-GE3 single MOSFET from Vishay Siliconix is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SIHG120N60E-GE3 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Renesas Electronics America Inc
RJK0366DPA-02#J0B
Vishay Siliconix
IRFL210TRPBF
Infineon Technologies
ISC012N04NM6ATMA1
onsemi
NTBS9D0N10MC
Microchip Technology
TN0610N3-G-P003
onsemi
NDD03N40ZT4G
Rohm Semiconductor
RQ3L090GNTB
Microchip Technology
APT10086BVRG
onsemi
FDA18N50
Rohm Semiconductor