SIHG47N60EF-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 47A TO247AC
$10.42
Available to order
Reference Price (USD)
1+
$11.35000
10+
$10.24900
100+
$8.49730
500+
$7.18390
1,000+
$6.30830
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHG47N60EF-GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 379W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPD70R600P7SAUMA1
Infineon Technologies
AUIRF4905
Infineon Technologies
IPA60R199CPXKSA1
Panjit International Inc.
PJQ5463A-AU_R2_000A1
Texas Instruments
CSD17483F4
Vishay Siliconix
SIHP100N60E-GE3
Diodes Incorporated
DMP1012UFDF-13
Infineon Technologies
IPA60R099C6XKSA1
Diodes Incorporated
DMP3021SSS-13
Vishay Siliconix