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SIHP25N50E-GE3

Vishay Siliconix
SIHP25N50E-GE3 Preview
Vishay Siliconix
MOSFET N-CH 500V 26A TO220AB
$3.36
Available to order
Reference Price (USD)
1+
$3.67000
10+
$3.28600
100+
$2.71530
500+
$2.22068
1,000+
$1.89092
3,000+
$1.80214
5,000+
$1.73872
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

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