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SIHP35N60E-BE3

Vishay Siliconix
SIHP35N60E-BE3 Preview
Vishay Siliconix
N-CHANNEL 600V
$6.34
Available to order
Reference Price (USD)
1+
$6.34000
500+
$6.2766
1000+
$6.2132
1500+
$6.1498
2000+
$6.0864
2500+
$6.023
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

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