SIHP7N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 7A TO220AB
$2.19
Available to order
Reference Price (USD)
1+
$2.37000
10+
$2.14700
100+
$1.73810
500+
$1.36688
1,000+
$1.14413
3,000+
$1.06988
5,000+
$1.03275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHP7N60E-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SIHP7N60E-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Texas Instruments
CSD22202W15
Fairchild Semiconductor
SFW9530TM
Infineon Technologies
IPA60R060C7XKSA1
Infineon Technologies
IRFR812TRPBF
Toshiba Semiconductor and Storage
TW027N65C,S1F
Alpha & Omega Semiconductor Inc.
AOD423
onsemi
NVMFS5C673NT1G
Infineon Technologies
IRL60B216
Rohm Semiconductor
RSD200N05TL
Infineon Technologies