SIRA20BDP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 82A/335A PPAK
$1.72
Available to order
Reference Price (USD)
1+
$1.72000
500+
$1.7028
1000+
$1.6856
1500+
$1.6684
2000+
$1.6512
2500+
$1.634
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SIRA20BDP-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SIRA20BDP-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Diodes Incorporated
DMP6110SSDQ-13
Alpha & Omega Semiconductor Inc.
AOB2910L
IXYS
IXTA4N70X2
Diodes Incorporated
DMP2078LCA3-7
IXYS
IXFB82N60Q3
Vishay Siliconix
SIR120DP-T1-RE3
Microchip Technology
TP2510N8-G
Infineon Technologies
SPD07N60C3ATMA1
onsemi
NVMFS5C682NLAFT1G
Fairchild Semiconductor