SIRA99DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 47.9A/195A PPAK
$2.87
Available to order
Reference Price (USD)
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$2.87000
500+
$2.8413
1000+
$2.8126
1500+
$2.7839
2000+
$2.7552
2500+
$2.7265
Exquisite packaging
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Discover the SIRA99DP-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SIRA99DP-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Vgs (Max): +16V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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