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SIS590DN-T1-GE3

Vishay Siliconix
SIS590DN-T1-GE3 Preview
Vishay Siliconix
COMBO N- & P-CHANNEL 100 V (D-S)
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Specifications

  • Product Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual

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