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TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage
TPCF8201(TE85L,F,M Preview
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 3A VS-8
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Specifications

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)

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