SIS932EDN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH DL 30V PWRPAK 1212-8
$0.68
Available to order
Reference Price (USD)
3,000+
$0.25595
6,000+
$0.24035
15,000+
$0.22475
30,000+
$0.21383
Exquisite packaging
Discount
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The SIS932EDN-T1-GE3 by Vishay Siliconix is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the SIS932EDN-T1-GE3 ensures consistent and dependable performance. Vishay Siliconix's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
- Power - Max: 2.6W (Ta), 23W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8 Dual
- Supplier Device Package: PowerPAK® 1212-8 Dual
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