SISA12ADN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 25A PPAK1212-8
$0.91
Available to order
Reference Price (USD)
3,000+
$0.37290
6,000+
$0.34870
15,000+
$0.33660
30,000+
$0.33000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SISA12ADN-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SISA12ADN-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
STMicroelectronics
STH6N95K5-2
IXYS
IXFK150N30P3
Alpha & Omega Semiconductor Inc.
AOD2210
STMicroelectronics
STD6NK50ZT4
Fairchild Semiconductor
FDP7045L
Vishay Siliconix
IRFI9640GPBF
Vishay Siliconix
SISS28DN-T1-GE3
Infineon Technologies
IRF3805STRLPBF
IXYS
IXTA260N055T2
Panjit International Inc.