SISH110DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 13.5A PPAK
$0.74
Available to order
Reference Price (USD)
3,000+
$0.73800
6,000+
$0.70335
15,000+
$0.67860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SISH110DN-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SISH110DN-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8SH
- Package / Case: PowerPAK® 1212-8SH
Related Products
Vishay Siliconix
SIA4371EDJ-T1-GE3
Infineon Technologies
IPS65R1K0CEAKMA1
Vishay Siliconix
SQ4425EY-T1_BE3
Vishay Siliconix
SQ2303ES-T1_BE3
Vishay Siliconix
SI3459BDV-T1-GE3
Infineon Technologies
IPS80R750P7AKMA1
STMicroelectronics
STF9HN65M2
Diodes Incorporated
DMT3009LFVWQ-7
Infineon Technologies
SPS01N60C3
onsemi