SISH407DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 15.4A/25A PPAK
$0.93
Available to order
Reference Price (USD)
3,000+
$0.38138
6,000+
$0.35663
15,000+
$0.34425
30,000+
$0.33750
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SISH407DN-T1-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SISH407DN-T1-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 93.8 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8SH
- Package / Case: PowerPAK® 1212-8SH
Related Products
IXYS
IXFN180N20
NXP USA Inc.
PSMN7R5-25YLC,115
NXP USA Inc.
PSMN5R0-100XS,127
Vishay Siliconix
SI2337DS-T1-BE3
Diodes Incorporated
DMP2110UQ-7
Rectron USA
RM6N100S4V
Diodes Incorporated
ZXMN6A08GQTA
IXYS
IXTA15N50L2-TRL
Fairchild Semiconductor
ISL9N312AS3ST
Renesas Electronics America Inc