SIZ322DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2 N-CH 25V 30A 8-POWER33
$0.96
Available to order
Reference Price (USD)
3,000+
$0.37036
6,000+
$0.34482
15,000+
$0.33205
30,000+
$0.32508
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the SIZ322DT-T1-GE3, a premium Transistors - FETs, MOSFETs - Arrays product from Vishay Siliconix. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the SIZ322DT-T1-GE3 delivers consistent and reliable operation. Vishay Siliconix's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V
- Power - Max: 16.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
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