SI5902BDC-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 4A 1206-8
$1.38
Available to order
Reference Price (USD)
3,000+
$0.62320
6,000+
$0.59394
15,000+
$0.57304
Exquisite packaging
Discount
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The SI5902BDC-T1-E3 from Vishay Siliconix is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SI5902BDC-T1-E3 provides reliable performance in demanding environments. Choose Vishay Siliconix for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
- Power - Max: 3.12W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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