DMN3032LFDB-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 6.2A UDFN2020-6
$0.14
Available to order
Reference Price (USD)
1+
$0.13710
500+
$0.135729
1000+
$0.134358
1500+
$0.132987
2000+
$0.131616
2500+
$0.130245
Exquisite packaging
Discount
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The DMN3032LFDB-13 by Diodes Incorporated is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the DMN3032LFDB-13 ensures consistent and dependable performance. Diodes Incorporated's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.2A
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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