SQ1912EH-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2 N-CH 20V 800MA SC70-6
$0.51
Available to order
Reference Price (USD)
3,000+
$0.13788
6,000+
$0.12996
15,000+
$0.12204
30,000+
$0.11254
75,000+
$0.10858
Exquisite packaging
Discount
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Elevate your electronics with the SQ1912EH-T1_GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SQ1912EH-T1_GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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