SIZF360DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET DL N-CH 30V PPAIR 3X3FDC
$1.68
Available to order
Reference Price (USD)
1+
$1.68000
500+
$1.6632
1000+
$1.6464
1500+
$1.6296
2000+
$1.6128
2500+
$1.596
Exquisite packaging
Discount
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Enhance your circuit designs with the SIZF360DT-T1-GE3, a premium Transistors - FETs, MOSFETs - Arrays product from Vishay Siliconix. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the SIZF360DT-T1-GE3 delivers consistent and reliable operation. Vishay Siliconix's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
- Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerPair™
- Supplier Device Package: 6-PowerPair™
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