SPB10N10LG
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SPB10N10LG from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SPB10N10LG ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 21µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Alpha & Omega Semiconductor Inc.
AOK20N60L
Texas Instruments
CSD19537Q3T
onsemi
BFL4007-1E
Infineon Technologies
AUIRF7769L2TR
Infineon Technologies
BSB008NE2LXXUMA1
Rohm Semiconductor
RUR040N02HZGTL
Renesas Electronics America Inc
UPA1807GR-9JG-E1-A
Alpha & Omega Semiconductor Inc.
AOV11S60
Vishay Siliconix
SI2328DS-T1-GE3
STMicroelectronics