SPI08N50C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 560V 7.6A TO262-3
$0.77
Available to order
Reference Price (USD)
1+
$0.77000
500+
$0.7623
1000+
$0.7546
1500+
$0.7469
2000+
$0.7392
2500+
$0.7315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SPI08N50C3XKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SPI08N50C3XKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
STMicroelectronics
STD30NF06LT4
IXYS
IXTA06N120P-TRL
Panjit International Inc.
PJA3449-AU_R1_000A1
Nexperia USA Inc.
PMPB27EP,115
Vishay Siliconix
SUD20N10-66L-GE3
Infineon Technologies
BSZ028N04LSATMA1
Infineon Technologies
IPB180P04P403ATMA1
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL3401A-F2-0000HF
onsemi
HUF76429S3ST
onsemi