SPW55N80C3FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 54.9A TO247-3
$17.92
Available to order
Reference Price (USD)
1+
$18.22000
10+
$16.67900
240+
$14.37633
720+
$12.45715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SPW55N80C3FKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SPW55N80C3FKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 54.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 32.6A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7520 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
Infineon Technologies
BSR802NL6327HTSA1
STMicroelectronics
STL24N60DM2
Vishay Siliconix
SQ2398ES-T1_GE3
Diodes Incorporated
DMT3020LFDF-13
Vishay Siliconix
SI4186DY-T1-GE3
onsemi
FCD380N60E
Infineon Technologies
IRF7495TRPBF
Infineon Technologies
IPC100N04S51R2ATMA1
Renesas Electronics America Inc
2SK2511-A
Diodes Incorporated