SQ3985EV-T1_GE3
Vishay Siliconix

Vishay Siliconix
MOSFET 2 P-CH 20V 3.9A 6TSOP
$0.72
Available to order
Reference Price (USD)
3,000+
$0.25992
6,000+
$0.24408
15,000+
$0.22824
30,000+
$0.21715
Exquisite packaging
Discount
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Elevate your electronics with the SQ3985EV-T1_GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SQ3985EV-T1_GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
- Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
- Power - Max: 3W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP