SQ3989EV-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2 P-CH 30V 2.5A 6TSOP
$0.63
Available to order
Reference Price (USD)
3,000+
$0.21299
6,000+
$0.20001
15,000+
$0.18703
30,000+
$0.17794
Exquisite packaging
Discount
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The SQ3989EV-T1_GE3 from Vishay Siliconix is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SQ3989EV-T1_GE3 provides reliable performance in demanding environments. Choose Vishay Siliconix for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.67W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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