SQD40131EL_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 40V 50A TO252AA
$1.41
Available to order
Reference Price (USD)
2,000+
$0.54516
6,000+
$0.51790
10,000+
$0.49843
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SQD40131EL_GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SQD40131EL_GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Micro Commercial Co
MCU60P06-TP
NTE Electronics, Inc
NTE2973
Infineon Technologies
SPW20N60C3FKSA1
Diodes Incorporated
DMT6006LSS-13
onsemi
HUFA76429D3
onsemi
FDN338P
onsemi
MMSF4N01HDR2
Infineon Technologies
IPD80R900P7ATMA1
Harris Corporation
RF1S9640
onsemi