SQJ200EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 20A/60A PPAK SO
$1.27
Available to order
Reference Price (USD)
3,000+
$0.47232
6,000+
$0.45014
15,000+
$0.43430
Exquisite packaging
Discount
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Choose the SQJ200EP-T1_GE3 from Vishay Siliconix for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SQJ200EP-T1_GE3 stands out for its reliability and efficiency. Vishay Siliconix's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 20A, 60A
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
- Power - Max: 27W, 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
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