SQJ208EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET DUAL N-CH AUTO 40V PP SO-
$1.55
Available to order
Reference Price (USD)
1+
$1.55000
500+
$1.5345
1000+
$1.519
1500+
$1.5035
2000+
$1.488
2500+
$1.4725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the SQJ208EP-T1_GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SQJ208EP-T1_GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
- Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V, 3900pF @ 25V
- Power - Max: 27W (Tc), 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Related Products
Fairchild Semiconductor
FDC6322C
Diodes Incorporated
DMC2700UDM-7
Diodes Incorporated
DMN63D8LDW-13
Diodes Incorporated
DMC10H220LSD-13
Diodes Incorporated
DMN3015LSD-13
Advanced Linear Devices Inc.
ALD110904SAL
Alpha & Omega Semiconductor Inc.
AOSD21311C
Microchip Technology
MSCSM70VM19C3AG
Taiwan Semiconductor Corporation
TSM300NB06DCR RLG
Microchip Technology