Shopping cart

Subtotal: $0.00

SQJA68EP-T1_GE3

Vishay Siliconix
SQJA68EP-T1_GE3 Preview
Vishay Siliconix
MOSFET N-CH 100V 14A PPAK SO-8L
$0.87
Available to order
Reference Price (USD)
3,000+
$0.29493
6,000+
$0.27579
15,000+
$0.26622
30,000+
$0.26100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8L
  • Package / Case: PowerPAK® SO-8L

Related Products

Rohm Semiconductor

SCT2080KEC

NXP USA Inc.

PMCM650VNEZ

Rohm Semiconductor

RQ5E030AJTCL

Renesas Electronics America Inc

UPA2749UT1A-E2-AY

Texas Instruments

CSD16415Q5T

Vishay Siliconix

SIA110DJ-T1-GE3

STMicroelectronics

STL210N4LF7AG

Vishay Siliconix

IRFZ48SPBF

Top