SQM120N04-1M7_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 120A TO263
$2.25
Available to order
Reference Price (USD)
800+
$1.68300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQM120N04-1M7_GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SQM120N04-1M7_GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SI4686DY-T1-GE3
onsemi
FDMA86265P
onsemi
NTD4404N1
Infineon Technologies
IPB22N03S4L-15ATMA1
Fairchild Semiconductor
FDZ209N
Nexperia USA Inc.
PSMNR55-40SSHJ
Harris Corporation
IRFPC40
IXYS
IXFB100N50P
onsemi
FDBL0090N40
Diodes Incorporated